BDX33B Просмотр технического описания (PDF) - Comset Semiconductors
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BDX33B Datasheet PDF : 4 Pages
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NPN BDX33 – BDX33A – BDX33B – BDX33C
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in
monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package.
They are intented for use in power linear and switching applications.
The complementary PNP types are the BDX34A, BDX34B and BDX34C respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage IB=0
VCBO
IC
IB
PT
TJ
TS
Collector-Base Voltage IE=0
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC(RMS)
ICM
@ TC = 25°
BDX33
BDX33A
BDX33B
BDX33C
BDX33
BDX33A
BDX33B
BDX33C
Value
45
60
80
100
45
60
80
100
10
15
0.25
70
-65 to +150
Unit
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.78
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1/4
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