BDX33(Old_V) Просмотр технического описания (PDF) - Comset Semiconductors

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BDX33
(Rev.:Old_V)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Comset Semiconductors 

NPN BDX33 – BDX33A – BDX33B – BDX33C

PNP BDX34 – BDX34A – BDX34B – BDX34C

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

BDX33

BDX33A

BDX33B

BDX33C

BDX34

BDX34A

BDX34B

BDX34C

Value

Unit

1.78

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCEO(SUS)

Collector-Emitter

Breakdown Voltage (*)

IC=100 mA

VCER(SUS)

Collector-Emitter Sustaining

Voltage (*)

IB=100 mA, RBE=100Ω

BDX33

BDX34

45

-

-

BDX33A

BDX34A

60

-

-

V

BDX33B

BDX34B

80

-

-

BDX33C

BDX34C

100

-

-

BDX33

BDX34

45

-

-

BDX33A

BDX34A

60

-

-

V

BDX33B

BDX34B

80

-

-

BDX33C

BDX34C

100

-

-

COMSET SEMICONDUCTORS

3/6

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