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MCR8DSMT4

Sensitive Gate Silicon Controlled Rectifiers

Kersemi Electronic Co., Ltd. 

MCR8DSM, MCR8DSN

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

Features

• Pb−Free Package is Available

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Available in Two Package Styles

Surface Mount Lead Form − Case 369C

Miniature Plastic Package − Straight Leads − Case 369

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Peak Repetitive Off−State Voltage

VDRM,

V

(Note 1) (TJ = −40 to 110°C, Sine Wave, VRRM

50 to 60 Hz, Gate Open)

MCR8DSM

600

MCR8DSN

800

On−State RMS Current

(180° Conduction Angles; TC = 90°C)

Average On−State Current

(180° Conduction Angles; TC = 90°C)

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz,

TJ = 110°C)

Circuit Fusing Consideration

(t = 8.3 msec)

IT(RMS)

IT(AV)

ITSM

I2t

8.0

A

5.1

A

90

A

34

A2sec

Forward Peak Gate Power

PGM

5.0

W

(Pulse Width ≤ 1.0 msec, TC = 90°C)

Forward Average Gate Power

(t = 8.3 msec, TC = 90°C)

PG(AV)

0.5

W

Forward Peak Gate Current

IGM

2.0

A

(Pulse Width ≤ 1.0 msec, TC = 90°C)

Operating Junction Temperature Range

TJ

−40 to 110 °C

Storage Temperature Range

Tstg − 40 to 150 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings

apply for negative gate voltage; positive gate voltage shall not be applied

concurrent with negative potential on the anode. Blocking voltages shall not

be tested with a constant current source such that the voltage ratings of the

device are exceeded.

1

www.kersemi.com

SCRs

8 AMPERES RMS

600 − 800 VOLTS

G

A

K

12

3

4

DPAK

CASE 369C

STYLE 4

MARKING

DIAGRAM

YWW

CR

8DSx

Y

= Year

WW

= Work Week

x

= M or N

PIN ASSIGNMENT

1

Cathode

2

Anode

3

Gate

4

Anode

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

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