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MSARS50S20YR-1 Просмотр технического описания (PDF) - Microsemi Corporation

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MSARS50S20YR-1
Microsemi
Microsemi Corporation Microsemi
MSARS50S20YR-1 Datasheet PDF : 2 Pages
1 2
8700 E. Thom as Road
Scottsdale, AZ 85252
PH: (480) 941-6300
FAX: (714) 372-8459
MSARS50S20Y
MSARS50S20YR
Features
passivated mesa structure for very low leakage currents
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic
Low package inductance
Very low thermal resistance
Available as standard polarity (strap-to-anode, MSARS50S20Y) and
reverse polarity (strap-to-cathode: MSARS50S20YR)
Available with Space-level equivalent (add “S”-suffix to the part number)
or TX-level equivalent screening (add “V”-suffix to the part number), per
PS11.50
Add -1 suffix for jumper less and gold plate version, i.e.
MSARS50S20YS-1
200 Volts
50 Amps
2 µs
LOW VOLTAGE
DROP STANDARD
RECTIFIER
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION
SYMBOL
MAX.
UNIT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case:
VRRM
VRWM
VR
IF(ave)
IFSM
Tj
Tstg
θJC
200
200
200
50
375
-65 to +175
-65 to +175
1.0
Volts
Volts
Volts
Amps
Amps
°C
°C
°C/W
Mechanical Outline
Slugger1 (DO-217AA)
Mechanical Outline
Slugger1 (DO-217AA)
Revision 3

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