C5149 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

производитель

C5149

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5149

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 400mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1.3A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB=B 1.3A

ICBO

Collector Cutoff Current

VCB= 1500V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V ; IC= 0

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

hFE-2

DC Current Gain

IC= 5A ; VCE= 5V

VECF

C-E Diode Forward Voltage

IF= 5A

fT

Current-Gain—Bandwidth Product

IC= 0.1A ; VCE= 10V

COB

Output Capacitance

Switching times

IE=0 ; VCB=10V; ftest=1.0MHz

tstg

Storage Time

tf

Fall Time

ICP= 5A, IB1(end)= 1.1A ;

fH= 31.5kHz

MIN TYP. MAX UNIT

5

V

5.0

V

1.5

V

1.0 mA

66

200 mA

8

25

3.8

8.0

1.8

V

2

MHz

110

pF

6.0 μs

0.5 μs

isc Website：www.iscsemi.cn

2

Share Link: