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85HF10 Просмотр технического описания (PDF) - Vishay Semiconductors

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85HF10 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Standard Recovery Diodes,
(Stud Version), 85 A
85HF(R) Series
Vishay Semiconductors
140
DC
120
180°
120°
90°
100
60°
30°
80
60 RMS Limit
0.7
RthSA
K/W
1 K/W
1.5 K/W
=
0.5
K/W
-
Delta
R
2 K/W
40
Conduction Period
3 K/W
5 K/W
85HF(R) Series
20
(1400V, 1600V)
10 K/W
Tj = 150˚C
0
0 20 40 60 80 100 120 1040 25 50 75 100 125 150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
1600
1400
1200
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj Max.
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1000
800
600 85HF(R) Series
400
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
1800
1600
1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj Max.
No Voltage Reapplied
Rated Vrrm Reapplied
1200
1000
800
600
400 85HF(R) Series
200
0.01
0.1
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
10000
1000
Tj = 25°C
Tj = Tj Max.
100
85HF(R) Series
up to 1200V
10
0123456
Instantaneous Forward Voltage (V)
Fig. 11 - Forward Voltage Drop Characteristics
(up to 1200 V)
1000
Tj = Tj Max.
100
Tj = 25°C
10
88HF (R) Series
1
0 0.5 1 1.5 2 2.5
Instantaneous Forward Voltage (V)
Fig. 12 - Forward Voltage Drop Characteristics
(for 1400 V, 1600 V)
Document Number: 93529
Revision: 25-May-09
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5

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