HVC365 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HVC365

Variable Capacitance Diode for VCXO

Hitachi -> Renesas Electronics 

HVC365

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Junction temperature

Storage temperature

Symbol

VR

Tj

Tstg

Value

Unit

15

V

125

°C

-55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Reverse current

Capacitance

Capacitance ratio

Series resistance

ESD-Capability* 1

Symbol

I R1

I R2

C1

C4

n

rs

—

Min Typ

——

——

27.05 —

6.05 —

3.0 —

——

80 —

Max Unit

10 nA

100

28.55 pF

7.55

——

1.5 Ω

—V

Notes 1. Failure criterion ; IR ≥ 20nA at VR =10 V

Test Condition

VR = 10V

VR = 10V, Ta =60°C

VR = 1V, f = 1 MHz

VR = 4V, f = 1 MHz

C1 / C4

VR = 4V, f = 100 MHz

C=200pF , Both forward and reverse

direction 1 pulse.

2

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