1N4139 Просмотр технического описания (PDF) - Diode Semiconductor Korea
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1N4139 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
1N4139 - - - 1N4146
FIG.1 -- TYPICAL FORWARD CHARACTERISTIC
10
1.0
TJ=250 C
Pulse Width
=300us
0.1
.01
0.4 0.6
0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.2 -- TYPICAL JUNCTION CAPACITANCE
100
60
40
20
10
f=1MHz
TJ=25
4
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.3 -- PEAK FORWARD SURGE CURRENT
400
300
TJ=125℃
8.3ms Single Half
Sine-Wave
200
100
0
1
2
4
8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- FORWARD DEATING CURVE
4
3
2
Single Phase
Half Wave 60HZ
Resistive or
1
Inductive Load
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE,
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