FDC2512 Просмотр технического описания (PDF) - ON Semiconductor
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FDC2512 Datasheet PDF : 6 Pages
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www.onsemi.com
FDC2512
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 1.4 A, 150 V.
RDS(ON) = 425 mΩ @ VGS = 10 V
RDS(ON) = 475 mΩ @ VGS = 6 V
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed
S
D
D
SuperSOT TM-6
G
DD
1
6
2
5
3
4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
(Note 3)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.252
FDC2512
7’’
Ratings
150
± 20
1.4
8
13.5
1.6
0.8
−55 to +150
78
30
Tape width
8mm
Units
V
V
A
mJ
W
°C
°C/W
°C/W
Quantity
3000 units
Semico2nductor Components Industries, LLC, 2017
March, 2017, Rev. 1.4
1
Publication Order Number:
FDC2512
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