BUK556-60A Просмотр технического описания (PDF) - Philips Electronics
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BUK556-60A Datasheet PDF : 7 Pages
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Philips Semiconductors
PowerMOS transistor
Logic level FET
Product Specification
BUK556-60A
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ˚C
VDS = 60 V; VGS = 0 V; Tj =125 ˚C
VGS = ±15 V; VDS = 0 V
VGS = 5 V; ID = 25 A
MIN. TYP. MAX. UNIT
60
-
-
V
1.0 1.5 2.0 V
-
1
10 µA
-
0.1 1.0 mA
-
10 100 nA
-
20 26 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 25 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 5 V;
RGS = 50 Ω;
Rgen = 50 Ω
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
17
-
-
-
-
-
-
-
-
TYP.
30
2200
700
280
40
150
350
190
5
MAX.
-
2800
1000
400
50
250
450
250
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
5
-
nH
- 12.5 -
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 50 A ; VGS = 0 V
trr
Reverse recovery time
IF = 50 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 25 A ; VDD ≤ 25 V ;
VGS = 5 V ; RGS = 50 Ω
MIN. TYP. MAX. UNIT
-
-
50
A
-
- 200 A
-
1.1 2.0 V
-
80
-
ns
-
0.4
-
µC
MIN. TYP. MAX. UNIT
-
- 150 mJ
April 1993
2
Rev 1.100
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