STTH3003CW Просмотр технического описания (PDF) - STMicroelectronics

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STTH3003CW

HIGH FREQUENCY SECONDARY RECTIFIER

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STTH3003CW

Fig. 7: Relative variation of dynamic parameters

versus junction temperature (reference: Tj = 125°C).

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

25

S factor

IRM

Tj(°C)

50

75

100

125

Fig. 8: Transient peak forward voltage versus

dIF/dt (90% confidence, per diode).

VFP(V)

8

7

IF=IF(av)

Tj=125°C

6

5

4

3

2

1

dIF/dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

Fig. 9: Forward recovery time versus dIF/dt (90%

confidence, per diode).

tfr(ns)

500

450

400

350

300

250

200

150

100

50

0

0 50

VFR=1.1*VF max.

IF=IF(av)

Tj=125°C

dIF/dt(A/µs)

100 150 200 250 300 350 400 450 500

4/5

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