IXTK180N15 Просмотр технического описания (PDF) - IXYS CORPORATION
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IXTK180N15 Datasheet PDF : 2 Pages
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Advance Technical Information
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 180N15
V=
DSS
ID25
=
R
=
DS(on)
150 V
180 A
10 mΩ
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D(RMS)
IDM
I
AR
EAR
E
AS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
150
V
150
V
±20
V
±30
V
180
A
75
A
720
A
90
A
64
mJ
3.0
J
5
V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
560
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
•
•
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
• Internationalstandardpackage
• Fastswitchingtimes
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS
VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
R
DS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
Characteristic Values
Min. Typ.
Max.
150
V
2.0
4.0 V
±200 nA
50 µA
3 mA
10 mΩ
Applications
• Motorcontrols
• DC choppers
• Switched-mode power supplies
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2002 IXYS All rights reserved
98878A (02/02)
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