STW26NM60N_13 Просмотр технического описания (PDF) - STMicroelectronics

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STW26NM60N_13

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in a TO-247 package

STMicroelectronics 

STW26NM60N

Electrical characteristics

Figure 8. Gate charge vs gate-source voltage

VGS

AM03320v1

(V)

VDD=480V

12

ID=20A

10

8

6

4

2

0

0 10 20 30 40 50 60 Qg(nC)

Figure 10. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.1

AM03321v1

ID = 250 µA

1.0

Figure 9. Capacitance variations

C

(pF)

AM03319v1

10000

Ciss

1000

100

Coss

10

Crss

1

0.1

1

10

100 VDS(V)

Figure 11. Normalized on resistance vs

temperature

RDS(on)

(norm)

2.1

VGS = 10 V

AM03322v1

1.7

0.9

1.3

0.8

0.9

0.7

-50 -25 0 25 50 75 100 TJ(°C)

Figure 12. Source-drain diode forward

characteristics

VSD

(V)

TJ=-50°C

AM03324v1

1.2

1.0

TJ=25°C

0.8

TJ=150°C

0.6

0.4

0

5

10

15 ISD(A)

0.5

-50 -25 0 25 50 75 100 TJ(°C)

Figure 13. Normalized VDS vs temperature

VDS

(norm)

1.10

ID=1mA

AM09028v1

1.08

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0 25 50 75 100 TJ(°C)

DocID025246 Rev 1

7/13

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