PIP3119-P Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

Список матч

PIP3119-P

Logic level TOPFET

Philips Electronics 

Philips Semiconductors

Logic level TOPFET

Product specification

PIP3119-P

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

VDS

Continuous drain source voltage1

ID

Continuous drain current

CONDITIONS

VIS = 5 V; Tmb = 25˚C

MIN.

-

-

ID

Continuous drain current

VIS = 5 V; Tmb ≤ 121˚C

-

II

Continuous input current

-5

IIRM

Repetitive peak input current

δ ≤ 0.1, tp = 300 µs

-50

PD

Total power dissipation

Tmb ≤ 25˚C

-

Tstg

Storage temperature

-55

Tj

Continuous junction temperature2

normal operation

-

Tsold

Lead temperature

during soldering

-

ESD LIMITING VALUE

SYMBOL PARAMETER

VC

Electrostatic discharge capacitor

voltage

CONDITIONS

Human body model;

C = 250 pF; R = 1.5 kΩ

MIN.

-

MAX.

50

self -

limited

20

5

50

90

175

150

260

MAX.

2

UNIT

V

A

A

mA

mA

W

˚C

˚C

˚C

UNIT

kV

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

EDSM

EDRM

Inductive load turn-off

Non-repetitive clamping energy

Repetitive clamping energy

IDM = 20 A; VDD ≤ 20 V

Tmb ≤ 25˚C

Tmb ≤ 95˚C; f = 250 Hz

-

350

mJ

-

45

mJ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload

- overtemperature and short circuit load.

SYMBOL PARAMETER

REQUIRED CONDITION

MIN. MAX. UNIT

VDS

Drain source voltage3

4 V ≤ VIS ≤ 5.5 V

0

35

V

THERMAL CHARACTERISTIC

SYMBOL PARAMETER

Rth j-mb

Thermal resistance

Junction to mounting base

CONDITIONS

-

MIN. TYP. MAX. UNIT

- 1.25 1.39 K/W

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.

2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.

3 All control logic and protection functions are disabled during conduction of the source drain diode.

May 2001

2

Rev 1.000

Share Link: