CY7C056V-15AI_11 Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C056V-15AI_11 Datasheet PDF : 26 Pages
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CY7C056V CY7C057V CY7C037V CY7C038V3.3 V 16K/32K x 36
FLEx36™ Asynchronous Dual-Port Static RAM
CY7C056V
CY7C057V
3.3 V 16K/32K x 36
FLEx36™ Asynchronous Dual-Port Static
RAM
Features
■ True dual-ported memory cells that allow simultaneous
access of the same memory location
■ 16K x 36 organization (CY7C056V)
■ 32K x 36 organization (CY7C057V)
■ 0.25-micron Complimentary metal oxide semiconductor
(CMOS) for optimum speed/power
■ High-speed access: 12/15 ns
■ Low operating power
❐ Active: ICC = 250 mA (typical)
❐ Standby: ISB3 = 10 A (typical)
■ Fully asynchronous operation
■ Automatic power-down
■ Expandable data bus to 72 bits or more using Master/Slave
Chip Select when using more than one device
Logic Block Diagram
R/WL
B0–B3
CE0L
CE1L
OEL
Left
Port
CEL
Control
Logic
9
I/O0L–I/O8L
9
I/O9L–I/O17L
9
I/O18L–I/O26L
9
I/O27L–I/O35L
I/O
Control
■ On-chip arbitration logic
■ Semaphores included to permit software handshaking
between ports
■ INT flag for port-to-port communication
■ Byte select on left port
■ Bus matching on right port
■ Depth expansion via dual chip enables
■ Pin select for Master or Slave
■ Commercial and Industrial temperature ranges
■ Available in 144-Pin Thin quad plastic flatpack (TQFP) or
172-Ball ball grid array (BGA)
■ Pb-free packages available
■ Compact packages:
❐ 144-Pin TQFP (20 x 20 x 1.4 mm)
❐ 172-Ball BGA (1.0-mm pitch) (15 x 15 x.51 mm)
I/O
Control
Right
Port
Control
Logic
CER
9
9
Bus
9
Match
9
R/WR
CE0R
CE1R
OER
BA
WA
9/18/36
I/OR
BM
SIZE
A0L–A13/14[L1]
14/15
Address
Decode
True Dual-Ported
RAM Array
Address
Decode
14/15
A0R–A13/14R[1]
14/15
14/15
SEML
BUSYL[2]
INTL
Notes
1. A0–A13 for 16K; A0–A14 for 32K devices.
2. BUSY is an output in Master mode and an input in Slave mode.
Interrupt
Semaphore
Arbitration
M/S
SEMR
BUSYR[2]
INTR
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 38-06055 Rev. *E
• San Jose, CA 95134-1709 • 408-943-2600
Revised March 30, 2011
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