BD244A Просмотр технического описания (PDF) - Comset Semiconductors

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BD244A

SILICON PNP POWER TRANSISTORS

Comset Semiconductors 

BD244 – A – B – C

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

ICES

ICEO

IEBO

VCEO

hFE

VCE(SAT)

VBE

VCE = -45 V , VBE = 0 BD244

Collector- Emitter Cut- VCE = -60 V , VBE = 0 BD244A

off Current

VCE = -80 V , VBE = 0 BD244B

-

- -0.4 mA

VCE = -100 V , VBE = 0 BD244C

Collector Cut-off

Current

VCE = -30 V , IB = 0

VCE = -60 V , IB = 0

BD244

BD244A

BD244B

BD244C

-

- -0.7 mA

Emitter Cut-off Current VE B = -5 V , IC = 0

BD244

-

-

-45 -

-1 mA

-

Collector- Emitter

Breakdown Voltage

(*)

IC = -30 mA, IB = 0

BD244A -60 -

BD244B -80 -

-

-

V

BD244C -100 -

-

DC Current Gain (*)

Collector-Emitter

saturation Voltage (*)

VCE = -4 V, IC = -0.3 A

VCE = -4 V, I C= -3 A

IC = -6 A, IB = -1 A

30 -

15 -

-

-

-

-

-

-1

V

Base-Emitter

Voltage(*)

VCE = -4 V, IC = -6 A

-

- -1.6 V

25/09/2012

COMSET SEMICONDUCTORS

2/3

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