MJ900 Просмотр технического описания (PDF) - Comset Semiconductors
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MJ900 Datasheet PDF : 3 Pages
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MJ900 – MJ901 PNP
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO
ICEO
IEBO
ICER
VCE(SAT)
VF
VBE
HFE
Collector-Emitter
Breakdown Voltage (*)
IC=-100 mA, IB=0
MJ900 -60 -
MJ901 -80 -
-
-
V
Collector Cutoff Current VCE=-30 V, IB=0
VCE=-40 V, IB=0
MJ900 -
MJ901 -
-
-
-500 µA
Emitter Cutoff Current
VBE=-5.0 V, IC=0
MJ900
MJ901
-
- -2.0 mA
VCB=-60 V, RBE=1.0 kΩ MJ900 -
Collector-Emitter Leakage
Current
VCB=-80 V, RBE=1.0 kΩ
VCB=-60 V, RBE=1.0 kΩ
TC=150°C
MJ901
MJ900
-
-
VCB=-80 V, RBE=1.0 kΩ
TC=150°C
MJ901
-
-
-
-1.0
-
mA
-5.0
-
Collector-Emitter
saturation Voltage (*)
IC=-3.0 A, IB=-2 mA
MJ900
MJ901
-
IC=-8.0 A, IB=-40 mA
MJ900
MJ901
-
- -2.0
V
- -4.0
Forward Voltage (pulse
method)
IF=-3 A
MJ900
MJ901
-
-1.8
-
V
Base-Emitter Voltage (*) IC=-3.0 A, VCE=-3.0V
MJ900
MJ901
-
- -2.5 V
DC Current Gain (*)
VCE=-3.0 V, IC=-3.0 A
MJ900
MJ901
1000
-
VCE=-3.0 V, IC=-4.0 A
MJ900
MJ901
750
-
-
-
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
29/10/2012
COMSET SEMICONDUCTORS
2|3
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