T40HFL100S02_08 Просмотр технического описания (PDF) - Vishay Semiconductors
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T40HFL100S02_08 Datasheet PDF : 15 Pages
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T..HFL Series
Vishay High Power Products
Fast Recovery Diodes,
40/70/85 A (T-Modules)
1.8
1.7
I FM= 300A
1.6
200A
1.5
100A
1.4
50A
1.3
1.2
T40HFL..S10
1.1 T70HFL..S10
TJ = 125 °C
1
10
100
Ra te Of Fa ll Of Forwa rd Current - d i/ d t (A/ µs)
Fig. 25 - Recovery Time Characteristics
1.2
1.1
1
0.9
0.8
0.7 T85HFL..S02
TJ= 125°C
IFM = 300A
200A
100A
50A
0.6
10
100
Ra te Of Fa ll Of Forwa rd Current - di/ dt (A/ µs)
Fig. 28 - Recovery Time Characteristics
40
35
I FM= 300A
200A
30
100A
25
50A
20
15
T40HFL..S10
10
T70HFL..S10
TJ = 125 °C
5
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)
Fig. 26 - Recovery Charge Characteristics
25
IFM = 300A
20
200A
100A
15
50A
10
T85HFL..S02
TJ = 125 °C
5
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 29 - Recovery Charge Characteristics
45
I FM= 300A
200A
40
100A
35
50A
30
25
20
T40HFL..S10
15
T70HFL..S10
TJ = 125 °C
10
10 20 30 40 50 60 70 80 90 100
Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)
Fig. 27 - Recovery Current Characteristics
28
26
IFM = 300A
200A
24
100A
50A
22
20
18
16
14
12
10
T85HFL..S02
8
TJ= 125°C
6
10 20 30 40 50 60 70 80 90 100
Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs)
Fig. 30 - Recovery Current Characteristics
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8
For technical questions, contact: ind-modules@vishay.com
Document Number: 93184
Revision: 13-Feb-08
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