RS1A Просмотр технического описания (PDF) - Diode Semiconductor Korea
Номер в каталоге
Компоненты Описание
Список матч
RS1A Datasheet PDF : 2 Pages
| |||
Diode Semiconductor Korea
RS1A- - -RS1M
Fig. 1 — Forward Current
Derating Curve
1.2
Resistive or Inductive Load
1.0
0.5
P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
0 20 40 60 80 100 120 140
Lead Temperature (°C)
160 180
Fig. 3 — Typical Instantaneous
Forward Characteristics
30
10
TJ = 125°C
1
TJ = 25°C
0.1
Pulse Width = 300µs
1% Duty Cycle
0.01
0.4
30
0.6 0.8
1 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 5 — Typical Junction
Capacitance
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
10
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current
50
TL = 90°C
8.3ms Single Half Sine-Wave
40
(JEDEC Method)
30
20
10
0
1
10
100
Number of Cycles at 60 HZ
Fig. 4 — Typical Reverse
Characteristics
30
10
TJ = 125°C
1
TJ = 100°C
0.1
0.01
0
TJ = 25°C
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 — Typical Transient
Thermal Impedance
100
Mounted on 0.2 x 0.2" (5 x 5mm)
Copper Pad Area
10
1
1
10
100
Reverse Voltage (V)
1
0.01
0.1
1
10
t, Pulse Duration (sec.)
www.diode.kr
Share Link: 