RHRP3060 Просмотр технического описания (PDF) - Fairchild Semiconductor

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RHRP3060

30A, 600V Hyperfast Diodes

Fairchild Semiconductor 

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

Test Conditions

Min.

RHRP3060

Typ.

Max.

VF

IR

trr

ta

tb

QRR

CJ

RθJC

IF = 30A

IF = 30A, TC = 150°C

VR = 400V

VR = 600V

VR = 400V, TC = 150°C

VR = 600V, TC = 150°C

IF = 1A, dlF/dt = 200A/µs

IF = 30A, dlF/dt = 200A/µs

IF = 30A, dlF/dt = 200A/µs

IF = 30A, dlF/dt = 200A/µs

IF = 30A, dlF/dt = 200A/µs

VR = 600V, IF = 0A

-

-

2.1

-

-

1.7

-

-

-

-

-

250

-

-

-

-

-

1.0

-

-

40

-

-

45

-

22

-

-

18

-

-

100

-

-

85

-

-

-

1.2

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%)

IR = Instantaneous reverse current.

trr = Reverse recovery time (See Figure 9), summation of ta + tb.

ta = Time to reach peak reverse current (See Figure 9).

tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).

QRR = Reverse recovery charge.

CJ = Junction Capacitance.

RθJC = Thermal resistance junction to case.

pw = pulse width.

D = Duty cycle.

Units

V

V

µA

µA

mA

mA

ns

ns

ns

ns

nC

pF

°C/W

RHRP3060 Rev. C

2

www.fairchildsemi.com

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