JANTXV2N6786_96 Просмотр технического описания (PDF) - International Rectifier

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JANTXV2N6786_96

HEXFET® POWER MOSFET

International Rectifier 

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JANTX2N6786, JANTXV2N6786 Device

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Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12b — Unclamped Inductive Waveforms

Fig. 13a — Gate Charge Test Circuit

Fig. 13b — Basic Gate Charge Waveform

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