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TDA7499SA_03 Просмотр технического описания (PDF) - STMicroelectronics

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TDA7499SA_03
ST-Microelectronics
STMicroelectronics ST-Microelectronics
TDA7499SA_03 Datasheet PDF : 10 Pages
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TDA7499SA
HEAT SINK DIMENSIONING:
In order to avoid the thermal protection intervention, that is placed approximatively at Tj = 150°C, it is important
the dimensioning of the Heat Sinker RTh (°C/W).
The parameters that influence the dimensioning are:
– Maximum dissipated power for the device (Pdmax)
– Max thermal resistance Junction to case (RTh j-c)
– Max. ambient temperature Tamb max
– Quiescent current Iq (mA)
Example:
VCC = ±10V, Rload = 8ohm, RTh j-c = 3.9 °C/W , Tamb max = 50°C
Pdmax = (N° channels) ·
------2----V----c---c--2-------
Π2 Rload
+
Iq
Vcc
Pdmax = 2 · ( 2.5 ) + 0.8 = 6W
(Heat Sinker)
RTh c-a
=
1----5---0-----–-----T---a---m-----b----m----a---x-
Pd max
RTh
j-c
=
1----5---0-----–----5----0-- – 3.9
6
=
12.7 ° C /W
In figure 7 is shown the Power derating curve for the device.
Figure 7. Power derating curve
25
20
15
10
5
0
0
(a)
(b)
(c)
40
80
120
Tamb (°C)
a) Infinite Heatsink
b) 10 °C/ W
c) 15 °C/ W
160
7/10

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