MMBTA92 Просмотр технического описания (PDF) - Fairchild Semiconductor

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MMBTA92

PNP High Voltage Amplifier

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

PNP High Voltage Amplifier

(continued)

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

IE = 100 µA, IC = 0

VCB = 200 V, IE = 0

VEB = 3.0 V, IC = 0

300

V

300

V

5.0

V

0.25

µA

0.1

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = 1.0 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 30 mA, VCE = 10 V

IC = 20 mA, IB = 2.0 mA

IC = 20 mA, IB = 2.0 mA

25

40

25

0.5

V

0.9

V

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 10 mA, VCE = 20 V,

50

f = 100 MHz

Ccb

Collector-Base Capacitance

VCB = 20 V, IE = 0, f = 1.0 MHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

MHz

6.0

pF

Spice Model

PNP (Is=218.9f Xti=3 Eg=1.11 Vaf=100 Bf=99 Ne=1.307 Ise=218.9f Ikf=.2016 Xtb=1.5 Br=24.67 Nc=2 Isc=0

Ikr=0 Rc=7 Cjc=19.88p Mjc=.4876 Vjc=.75 Fc=.5 Cje=81.49p Mje=.3493 Vje=.75 Tr=516.9p Tf=1.395n Itf=1.5

Vtf=22 Xtf=270 Rb=10)

Typical Characteristics

DC Current Gain

vs Collector Current

140

120

125 ºC

100

80

25 °C

60

- 40 ºC

40

20 VCE = 5V

0

0.1

1

10

100

I C - COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

Voltage vs Collector Current

β = 10

0.6

0.4

0.2

0.1

25 °C

125 ºC

- 40 ºC

1

10

100

I C - COLLECTOR CURRENT (mA)

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