NPN BD241 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE=30 V
BD241
ICEO
Collector Cutoff Current
VCE=30 V
VCE=60 V
BD241A
BD241B
VCE=60 V
BD241C
BD241
IEBO
Emitter Cutoff Current
VBE=5 V
BD241A
BD241B
BD241C
VCE=55 V
BD241
ICES
Collector Cutoff Current
(VBE = 0)
VCE=70 V
VCE=90 V
BD241A
BD241B
VCE=115 V
BD241C
BD241
VCEO(sus)
Collector-Emitter
Voltage (IB = 0) (*)
Sustaining
IC =30mA
BD241A
BD241B
BD241C
BD241
VCE=4 V, IC=1 A
BD241A
BD241B
hFE
DC Current Gain (*)
BD241C
BD241
VCE=4 V, IC=3 A
BD241A
BD241B
BD241C
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
BD241
IC=3 A, IB=0.6 A
BD241A
BD241B
BD241C
BD241
VBE(on)
Base-Emitter Voltage (*)
VCE=4 V, IC=3 A
BD241A
BD241B
BD241C
BD241
VCE=10 V
IC=0.5 A
f = 1KHz
BD241A
BD241B
hfe
Small Signal Current Gain
VCE=10 V
IC=0.5 A
f = 1MHz
BD241C
BD241
BD241A
BD241B
BD241C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Min Typ Max Unit
-
-
-
-
-
-
0.3 mA
-
-
-
-
-
-
-
-
1.0 mA
-
-
-
-
-
-
-
-
0.2 mA
-
-
45
60
80
V
100
25
-
-
-
10
-
-
-
- 1.2 V
-
- 1.8 V
20
-
-
3
-
-
-
23/10/2012
COMSET SEMICONDUCTORS
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