K3065 Просмотр технического описания (PDF) - ROHM Semiconductor
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K3065 Datasheet PDF : 4 Pages
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Transistors
10
1
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID(A)
Fig.7 Static Drain-Source On-
State Resistance vs.
Drain Current(ΙΙ)
1
Ta=25°C
Pulsed
0.75
2A
0.5
ID=1A
0.25
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS(V)
Fig.8 Static Drain-Source On-
State Resistance vs.
Gate-Source Voltage
2SK3065
1
VGS=4V
Pulsed
0.5
2A
ID=1A
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch(°C)
Fig.9 Static Drain-Source On-
State Resistance vs.
Channel Temperature
10
VDS=10V
10
Pulsed
Ta=−25°C
25°C
1
125°C
1
75°C
0.1
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
10
Ta=25°C
Pulsed
4V
1
VGS=0V
0.1
0.1
0.01
0.1
1
10
DRAIN CURRENT : ID(A)
Fig.10 Forward Trasfer Admitance vs.
Drain Current
0.01
0
0.4
0.8
1.2
1.6
SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.11 Reverse Drain Current vs.
Source-Drain Voltage(Ι)
0.01
0
0.4
0.8
1.2
1.6
SOURCE-DRAIN VOLTAGE : VSD(V)
Fig.12 Reverse Drain Current vs.
Source-Drain Voltage(ΙΙ)
1000
100
10
VGS=0V
f=1MHZ
Ta=25°C
Ciss
Coss
Crss
1
0
10
100
DRAIN-SOURCE VOLTAGE : VSD(V)
1000
100
10
0.1
td(off)
tf
tr
td(on)
VDD 30V
VGS=4V
RG=10Ω
Ta=25°C
Pulsed
1
10
DRAIN CURRENT : ID(A)
Fig.13 Typical Capacitance vs.
Drain-Source Voltage
Fig.14 Switching Characteristics
(a measurement circuit diagram Fig.17 , it refers 18 times)
1000
di/dt=50A/µs
VGS=0V
Ta=25°C
Pulsed
100
10
0.1
1
10
REVERSE DRAIN CURRENT : IDR(A)
Fig.15 Reverse Recovery Time vs.
Reverse Drain Current
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