TIP115 Просмотр технического описания (PDF) - Comset Semiconductors

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TIP115

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

PNP TIP115-116-117

SILICON DARLINGTON POWER TRANSISTORS

PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe. They are designed for general purpose amplifier and low-speed switching

applications.

NPN complements are TIP110-111-112

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCBO

Collector-Base Voltage

VCEO

Collector-Emitter Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

ICM

Collector Peak Current

IB

Base Current

@ Tc < 25°

PT

Power Dissipation

@ Ta < 25°

TJ

Junction Temperature

Ts

Storage Temperature range

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

TIP110

TIP111

TIP112

Value

-60

-80

-100

-60

-80

-100

-5

-2

-4

50

50

2

150

-65 to +150

Unit

V

V

V

A

A

mA

Watts

°C

05/10/2012

COMSET SEMICONDUCTORS

1|3

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