HIGH VOLTAGE SILICON RECTIFIER
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Forward Voltage
at IF = 10 mA
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 °C
VF
–
–
1
V
IR
–
–
25
nA
IR
–
–
5
µA
IR
–
–
50
µA
Capacitance
at VF = VR = 0 V
Ctot
–
–
4
pF
Voltage Rise when Switching ON
Vfr
–
–
2.5
V
tested with 50 mA Pulses
tp = 0.1 µs, Rise Time < 30 ns, fp = 5 to 100 kHz
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
trr
–
–
4
ns
Thermal Resistance Junction to Ambient Air
RthJA
–
–
3501)
K/W
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηv
0.45
–
–
–
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
Rectification Efficiency Measurement Circuit