BC817 Просмотр технического описания (PDF) - Continental Device India Limited

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Компоненты Описание

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BC817

SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited 

BC817

BC818

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–emitter voltage (VBE = 0)

Collector–emitter voltage (open base)

VCES

IC = 10 mA

VCE0

Emitter–base voltage (open collector)

VEB0

Collector current (d.c.)

IC

Collector current (peak value)

ICM

Emitter current (peak value)

Base current (d.c.)

–IEM

IB

Base current (peak value)

IBM

Total power dissipation up to Tamb = 25 °C

Ptot

Storage temperature

Tstg

Junction temperature

Tj

BC817

max. 50

BC818

30 V

max.

max.

max.

max.

max.

max.

max.

max.

max.

45

25 V

5

5V

500

mA

1000

mA

1000

mA

100

mA

200

mA

250

mW

–55 to +150 ° C

150

°C

THERMAL RESISTANCE

From junction to ambient

Rth j–a = 500 K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; VCB = 20 V; Tj = 25 °C

IE = 0; VCB = 20V; Tj = 150°C

Emitter cut–off current

IC = 0; VEB = 5 V

Base emitter voltage *

lC = 500 mA; VCE = 1 V

Saturation voltage

IC = 500 mA; IB = 50 mA

D.C. current gain

IC = 500 mA; VCE = 1 V

IC = 100 mA; VCE = 1 V; BC817/BC818

BC817–16

BC818–16

BC817–25

BC818–25

BC817–40

BC818–40

Transition frequency at f = 100 MHz

IC = 10 mA; VCE = 5 V

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10V

ICB0 <

ICB0 <

100 nA

5 µA

IEB0 <

10 µA

VBE <

1,2 V

VCEsat <

700 mV

hFE >

40

hFE 100 to 600

hFE 100 to 250

hFE 160 to 400

hFE 250 to 600

fT

>

100 MHz

Cc

typ.

5 pF

Continental Device India Limited

Data Sheet

Page 2 of 3

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