BT151-500C Просмотр технического описания (PDF) - NXP Semiconductors.
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BT151-500C Datasheet PDF : 8 Pages
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1;3 Semiconductors
Thyristors
Product specification
BT151 series C
IGT(Tj)
3 IGT(25 C)
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
BT145
2.5
2
1.5
1
0.5
0
-50
Fig.8.
0
50
100
150
Tj / C
Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25 C)
3
2.5
2
1.5
1
0.5
0
-50
Fig.9.
0
50
100
150
Tj / C
Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
30
Tj = 125 °C
IT
Tj = 25 °C
(A)
typ
20
max
10
Vo = 1.06 V
Rs = 0.0304 ohms
0
0
0.5
1
1.5
2
VT (V)
Fig.10. Typical and maximum on-state characteristic.
10 Zth j-mb (K/W)
1
0.1
0.01
P
D
tp
t
0.001
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp / s
Fig.11. Transient thermal impedance Zth j-mb, versus
pulse width tp.
10000 dVD/dt (V/us)
1000
100
RGK = 100 Ohms
gate open circuit
10
0
50
100
150
Tj / C
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
April 2004
4
Rev 1.000
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