CM2009 Просмотр технического описания (PDF) - ON Semiconductor
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CM2009 Datasheet PDF : 6 Pages
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CM2009
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
ICC_VIDEO VCC_VIDEO Supply Current
VCC_VIDEO = 5.0 V; VIDEO inputs at VCC_VIDEO
or GND
ICC_DDC
ICC_SYNC
VCC_DDC Supply Current
VCC_SYNC Supply Current
VCC_DDC = 5.0 V
VCC_SYNC = 5 V; SYNC inputs at GND or
VCC_SYNC; SYNC outputs unloaded
VCC_SYNC = 5 V; SYNC inputs at 3.0 V;
SYNC outputs unloaded
Min Typ Max Units
10 mA
10 mA
50 mA
2.0 mA
VF
VIH
VIL
VOH
VOL
ROUT
ESD Diode Forward Voltage
Logic High Input Voltage
Logic Low Input Voltage
Logic High Output Voltage
Logic Low Output Voltage
SYNC Driver Output Resistance
(CM2009−00 only)
IF = 10 mA
1.0 V
VCC_SYNC = 5.0 V; (Note 2)
2.0
V
VCC_SYNC = 5.0 V; (Note 2)
0.6 V
IOH = 0 mA, VCC_SYNC = 5.0 V; (Note 2)
4.85
V
IOL = 0 mA, VCC_SYNC = 5.0 V; (Note 2)
0.15 V
VCC_SYNC = 5.0 V; SYNC Inputs at GND or 3.0 V
65
W
ROUT SYNC Driver Output Resistance
VCC_SYNC = 5.0 V; SYNC Inputs at GND or 3.0 V;
15
W
(CM2009−02 only)
(Note ?)
VOH−02 Logic High Output Voltage
(CM2009−02 only)
IOH = 24 mA; VCC_SYNC = 5.0 V;
(Note 2)
2.0
V
VOL−02 Logic Low Output Voltage
(CM2009−02 only)
IOL = 24 mA; VCC_SYNC = 5.0 V;
(Note 2)
0.8 V
IIN
IOFF
VON
Input Current
VIDEO Inputs
SYNC_IN1, SYNC_IN2 Inputs
Level Shifting N−MOSFET ”OFF” State
Leakage Current
Voltage Drop Across Level−shifting
N−MOSFET when “ON”
VCC_VIDEO = 5.0 V; VIN = VCC_VIDEO or GND
VCC_SYNC = 5.0 V; VIN = VCC_SYNC or GND
(VCC_DDC − VDDC_IN) ≤ 0.4 V;
VDDC_OUT = VCC_DDC
(VCC_DDC − VDDC_OUT) ≤ 0.4 V;
VDDC_IN = VCC_DDC
VCC_DDC = 2.5 V; VS = GND; IDS = 3 mA;
±1 mA
±1 mA
10 mA
10 mA
0.18 V
CIN_VID VIDEO Input Capacitance
VCC_VIDEO = 5.0 V; VIN = 2.5 V; f = 1 MHz;
(Note 4)
4
pF
VCC_VIDEO = 2.5 V; VIN = 1.25 V; f = 1 MHz;
(Note 4)
4.5 pF
tPLH
SYNC Driver L => H Propagation Delay CL = 50 pF; VCC = 5.0 V; Input tR and tF ≤ 5 ns
12 ns
tPHL
SYNC Driver H => L Propagation Delay CL = 50 pF; VCC = 5.0 V; Input tR and tF ≤ 5 ns
12 ns
tR, tF
SYNC Driver Output Rise & Fall Times
CL = 50 pF; VCC = 5.0 V; Input tR and tF ≤ 5 ns
4
ns
VESD ESD Withstand Voltage
VCC_VIDEO = VCC_SYNC = 5 V; (Notes 3, 4 & ?)
±8
kV
1. All parameters specified over standard operating conditions unless otherwise noted.
2. These parameters apply only to the SYNC drivers. Note that ROUT = RT + RBUFFER.
3. Per the IEC−61000−4−2 International ESD Standard, Level 4 contact discharge method. BYP, VCC_VIDEO and VCC_SYNC must be bypassed
to GND via a low impedance ground plane with a 0.2 mF, low inductance, chip ceramic capacitor at each supply pin. ESD pulse is applied
between the applicable pins and GND. ESD pulses can be positive or negative with respect to GND. Applicable pins are: VIDEO_1, VIDEO_2,
VIDEO_3, SYNC_OUT1, SYNC_OUT2, DDC_OUT1 and DDC_OUT2. All other pins are ESD protected to the industry standard ±2 kV
Human Body Model (MIL−STD−883, Method 3015). The bypass capacitor at the BYP pin may optionally be omitted, in which case the max.
ESD withstand voltage for the DDC_OUT1 and DDC_OUT2 pins is reduced to ±4 kV.
4. The SYNC_OUT pins on the CM2009−02 are guaranteed for 2 kV HBM ESD protection.
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