2N1671 Просмотр технического описания (PDF) - Digitron Semiconductors
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2N1671 Datasheet PDF : 2 Pages
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DIGITRON SEMICONDUCTORS
2N1671A - C
UNIJUNCTION TRANSISTOR
MAXIMUM RATINGS
Rating
Base 1 – emitter reverse voltage
Base 2 – emitter reverse voltage
Interbase voltage
RMS emitter current
Emitter peak current
Total power dissipation
Maximum junction temperature
Storage temperature range
Symbol
VB1E
VB2E
VB1B2
IFRMS
IEM
Ptot
TJ
Tstg
Value
30
30
35
50
2
450
150
-55 to 150
Unit
V
V
V
mA
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
2N1671
Emitter reverse current
IEB2O
VB2E = 30V, IB1 = 0
2N1671A
2N1671B
2N1671
Emitter saturation voltage
VEB1(sat)
VB2B1 = 10V, IE = 50mA
2N1671A
2N1671B
2N1671
Interbase resistance
RBBO
VB2B1 = 3V, IE = 0
2N1671A
2N1671B
2N1671
Intrinsic standoff ratio
η
VB2B1 = 10V
2N1671A
2N1671B
2N1671
Valley current
IV
VB2B1 = 10V, RB2 = 100□ 2N1671A
2N1671B
2N1671
Peak current
IP
VB2B1 = 25V
2N1671A
2N1671B
Min
-
-
-
-
-
-
4.7
4.7
4.7
0.47
0.47
0.47
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-12
-12
-0.2
5
5
5
9.1
9.1
9.1
0.62
0.62
0.62
8
8
8
25
25
6
Unit
µA
V
K□
-
mA
µA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121023
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