BD675A Просмотр технического описания (PDF) - Inchange Semiconductor
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BD675A Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD675A/677A/679A/681
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD675A
VCEO(SUS)
Collector-emitter
sustaining
voltage
BD677A
BD679A
IC=50mA; IB=0
BD681
VCEsat
Collector-emitter BD675A/677A/679A
saturation voltage
BD681
IC=2A; IB=40mA
IC=1.5A; IB=30mA
VBE(ON)
Base-emitter
voltage
BD675A/677A/679A IC=2A ; VCE=3V
BD681
IC=1.5A ; VCE=3V
BD675A
VCB=45V; IE=0
ICBO
Collector
cut-off current
BD677A
BD679A
VCB=60V; IE=0
VCB=80V; IE=0
BD681
VCB=100V; IE=0
BD675A
VCE=45V; VBE=0
ICEO
Collector
cut-off current
BD677A
BD679A
VCE=60V; VBE=0
VCE=80V; VBE=0
BD681
VCE=100V; VBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
BD675A/677A/679A IC=2A ; VCE=3V
hFE
DC current gain
BD681
IC=1.5A ; VCE=3V
MIN TYP. MAX UNIT
45
60
V
80
100
2.8
V
2.5
2.5
V
2.5
0.2
mA
0.5
mA
2
mA
750
750
2
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