BC846 Просмотр технического описания (PDF) - Philips Electronics
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BC846 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BC846; BC847; BC848
1200
handbook, halfpage
hFE
1000
(1)
800
(2)
600
MGT731
400
(3)
200
0
10−1
1
10
102
103
IC (mA)
BC847C; VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 DC current gain as a function of collector
current; typical values.
1200
hanVdBboEok, halfpage
(mV)
1000
(1)
800
(2)
600
MGT732
400
(3)
200
0
10−2
10−1
1
10
102
103
IC (mA)
BC847C; VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
104
handbook, halfpage
VCEsat
(mV)
103
MGT733
102
(1)
10
10−1
(3) (2)
1
10
102
103
IC (mA)
BC847C; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
hVanBdEbosoakt, halfpage
(mV)
1000
(1)
800
(2)
600
(3)
400
MGT734
200
0
10−1
1
10
102
103
IC (mA)
BC847C; IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Feb 06
7
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