BUX84 Просмотр технического описания (PDF) - Comset Semiconductors
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BUX84 Datasheet PDF : 3 Pages
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NPN BUX84 – BUX85
ELECTRICAL CHARACTERISTICS (3)
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEM= VCESmax
VBE=0V
BUX84
BUX85
-
- 0.2
ICES
Collector Cutoff Current(2) VCEM= VCESmax
BUX84
mA
VBE=0V
-
- 1.5
Tj =125° C
BUX85
IEBO
Emitter Cutoff Current
VBE=5.0 V, IC=0
BUX84
BUX85
-
-
1 mA
VCEOsust
Collector-Emitter sustaining IC=100 mA, IBoff= 0 BUX84 400
Voltage
L=25mH
BUX85 450
-
-
-
-
V
hFE
DC Current Gain
IC=0.1 A, VCE=5 V
BUX84
BUX85
30
50
-
-
VCE(SAT)
Collector-Emitter saturation IC=0.3 A, IB=30 mA
Voltage
IC=1 A, IB=0.2A
BUX84
BUX85
BUX84
BUX85
-
-
- 0.8
-
1
V
VBE(SAT)
Base-Emitter saturation
Voltage
IC=1 A, IB=0.2 A
BUX84
BUX85
-
- 1.1
fT
Transition frequency
IC=0.5 A, VCE=10 V BUX84
f= 1MHz
BUX85
4
20
- MHz
ton
Turn-on time
TS
Storage time
Tf
Fall Time
Tf
Fall Time
IC=1 A, VCC=250 V BUX84
IB1=0.2A, IB2=0.4A BUX85
-
IC=1 A, VCC=250 V BUX84
IB1=0.2A, IB2=0.4
BUX85
-
IC=1 A, VCC=250 V BUX84
IB1=0.2A, IB2=0.4
BUX85
-
IC=1 A, VCC=250 V BUX84
IB1=0.2A, IB2=0.4
TC=95°
-
BUX85
0.3 0.5
2 3.5
0.4 -
µs
- 1.4
(1) Turn off current
(2) Measured with a half-sinewave (curve tracer)
(3)Puls test : PW =300µs, Duty Cycle< 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
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