2N6059 Просмотр технического описания (PDF) - Comset Semiconductors

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2N6059

POWER COMPLEMENTARY SILICON TRANSISTORS

Comset Semiconductors 

NPN 2N6057 – 2N6058 – 2N6059

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ MAx Unit

VCE= VCEX =60 V, VBE=-1.5 V 2N6050 -

VCE= VCEX =80 V, VBE=-1.5 V 2N6051 -

VCE= VCEX =100 V

VBE=-1.5 V

2N6052 -

ICEX

Collector Cutoff

Current

VCE= VCEX =60 V, VBE=-1.5 V

TC=150°C

2N6050

-

VCE= VCEX =80 V, VBE=-1.5 V

TC=150°C

2N6051

-

VCE= VCEX =100 V

VBE=-1.5 V, TC=150°C

ICEO

Collector Cutoff

Current

VCE=30 Vdc, IB=0

VCE=40 Vdc, IB=0

VCE=50 Vdc, IB=0

IEBO

Emitter Cutoff

Current

VEB=5 V

2N6052 -

2N6050 -

2N6051 -

2N6052 -

2N6050 -

2N6051 -

2N6052 -

Collector-Emitter

2N6050 60

VCEO(SUS) Sustaining Voltage IC=0.1 A

(*)

2N6051 80

2N6052 100

2N6050

VCE(SAT)

Collector-Emitter

saturation Voltage

(*)

IC=6 A, IB=24 mA

IC=12 A, IB=120 mA

2N6051 -

2N6052

2N6050

2N6051 -

2N6052

Base-Emitter

2N6050

VBE(SAT)

Saturation Voltage IC=12 A, IB=120 mA

(*)

2N6051 -

2N6052

VBE(ON)

Base-Emitter

Voltage (*)

IC=6 A, VCE=3 V

2N6050

2N6051 -

2N6052

fT

Transition

Frequency

2N6050

IC=5 A, VCE=3 V, f=1 MHz 2N6051 4

2N6052

2N6050

VCE=3 V, IC=6.0 A

hFE

DC Current Gain

(*)

2N6051 750

2N6052

2N6050

VCE=3.0 V, IC=12 A

2N6051 100

2N6052

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

17/10/2012

COMSET SEMICONDUCTORS

-

- 500 µA

-

-

-

5 mA

-

-

- 1.0 mA

-

-

- 2.0 mA

-

-

-

-

-

V

-

-

- 2.0

V

- 3.0

-

4

V

- 2.8 V

-

- MHz

- 18000 -

-

-

2|3

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