MMBT2907A Просмотр технического описания (PDF) - Secos Corporation.
Номер в каталоге
Компоненты Описание
Список матч
MMBT2907A Datasheet PDF : 4 Pages
| |||
Elektronische Bauelemente
MMBT2907A
PNP Silicon
General Purpose Transistor
TYPICAL SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
f = 1.0 kHz
8.0
8.0
6.0
IC = –1.0 mA, Rs = 430 Ω
6.0
–500 µA, Rs = 560 Ω
–50 µA, Rs = 2.7 kΩ
4.0
–100 µA, Rs = 1.6 kΩ
4.0
2.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
IC = –50 µA
–100 µA
–500 µA
–1.0 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, Frequency (kHz)
50 100
Figure 7. Frequency Effects
0
50 100 200
500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k
Rs, Source Resistance (OHMS)
Figure 8. Source Resistance Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
–0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30
Reverse Voltage (VOLTS)
Figure 9. Capacitances
400
300
200
100
80
VCE = –20 V
60
TJ = 25°C
40
30
20
–1.0 –2.0
–5.0 –10 –20 –50 –100 –200
IC, Collector Current (mA)
–500 –1000
Figure 10. Current–Gain — Bandwidth Product
–1.0
TJ = 25°C
–0.8
–0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
–0.4
–0.2
VCE(sat) @ IC/IB = 10
0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, Collector Current (mA)
Figure 11. “On” Voltage
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
+0.5
0
RqVC for VCE(sat)
–0.5
–1.0
–1.5
–2.0
RqVB for VBE
–2.5
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500
IC, Collector Current (mA)
Figure 12. Temperature Coefficients
Any changing of specification will not be informed individual
Page 4 of 4
Share Link: 