BUW13F Просмотр технического описания (PDF) - Philips Electronics
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BUW13F Datasheet PDF : 16 Pages
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Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13F; BUW13AF
SYMBOL
PARAMETER
CONDITIONS
tf
fall time
BUW13F
BUW13AF
ICon = 10 A; IB = 2 A;
VCL = 250 V; Tc = 100 °C
ICon = 8 A; IB = 1.6 A;
VCL = 300 V; Tc = 100 °C
Note
1. Measured with a half-sinewave voltage (curve tracer).
MIN. TYP. MAX. UNIT
−
200
300
ns
−
200
300
ns
handbook1, 2h0alfpage
Ptot max
(%)
80
MGK674
40
0
0
50
100 Th (oC) 150
Fig.2 Power derating curve.
handbook,2h0alfpage
IC
(A)
10
MGB896
BUW13F
BUW13AF
0
0
400
800 VCE (V) 1200
Tc ≤ 100 °C; VBE = −1 to −5 V.
Fig.3 Reverse bias SOAR.
1997 Aug 13
5
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