BUW13AF Просмотр технического описания (PDF) - Philips Electronics

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BUW13AF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW13F; BUW13AF

DESCRIPTION

High-voltage, high-speed,

glass-passivated NPN power

transistor in a SOT199 package.

ook, halfpage

APPLICATIONS

• Converters

• Inverters

• Switching regulators

• Motor control systems.

PINNING

PIN

DESCRIPTION

1

base

2

collector

3

emitter

mb mounting base;

electrically isolated

handbook, halfpage

2

1

MBB008

3

123

Front view

MSB012

Fig.1 Simplified outline (SOT199) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCESM

collector-emitter peak voltage

BUW13F

BUW13AF

VCEO

collector-emitter voltage

BUW13F

BUW13AF

VCEsat

ICsat

collector-emitter saturation voltage

collector saturation current

BUW13F

BUW13AF

IC

collector current (DC)

ICM

collector current (peak value)

Ptot

total power dissipation

tf

fall time

CONDITIONS

VBE = 0

open base

see Figs 8 and 10

see Figs 3 and 4

tp < 20 ms; see Fig 4

Th ≤ 25 °C; see Fig.2

resistive load; see Fig.13

MAX.

UNIT

850

V

1 000

V

400

V

450

V

1.5

V

10

A

8

A

15

A

30

A

37

W

0.8

µs

1997 Aug 13

2

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