BSM 181 F
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz (spread)
Typ. reverse recovery charge Qrr = f (Tj)
parameter: di/dt = 100 A/ µs, IF = 34 A
VR = 100 V
Forward characteristics of fast-recovery
reverse diode IF = f (VSD)
parameter: Tj, tp = 80 µs (spread)
Semiconductor Group
69