IDT71V416L Просмотр технического описания (PDF) - Integrated Device Technology
Номер в каталоге
Компоненты Описание
Список матч
IDT71V416L Datasheet PDF : 9 Pages
| |||
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings(1)
Symbol
Rating
Value
Recommended Operating
Temperature and Supply
Unit Voltage
VDD Supply Voltage Relative to VSS -0.5 to +4.6
V
VIN, VOUT
Terminal Voltage Relative to
VSS
-0.5 to VDD+0.5 V
TBIAS Temperature Under Bias
-55 to +125
oC
TSTG Storage Temperature
-55 to +125
oC
Grade
Commercial
Industrial
Temperature
0OC to +70OC
–40OC to +85OC
VSS
VDD
0V
See Below
0V
See Below
3624 tbl 05
PT
Power Dissipation
IOUT DC Output Current
1
W
Recommended DC Operating
50
mA Conditions
3624 tbl 04
NOTE:
Symbol
Parameter
Min. Typ. Max. Unit
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
VDD Supply Voltage
3.0 3.3
3.6
V
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
VSS Ground
0
0
0
V
maximum rating conditions for extended periods may affect reliability.
VIH Input High Voltage
2.0
____ VDD+0.3(1)
V
VIL Input Low Voltage
-0.3(2) ____
0.8
V
NOTES:
3624 tbl 06
1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
Truth Table(1)
CS
OE
WE
BLE
BHE
H
X
X
X
X
L
L
H
L
H
L
L
H
H
L
L
L
H
L
L
L
X
L
L
L
L
X
L
L
H
L
X
L
H
L
L
H
H
X
X
L
X
X
H
H
NOTE:
1. H = VIH, L = VIL, X = Don't care.
I/O0-I/O7
High-Z
DATAOUT
High-Z
DATAOUT
DATAIN
DATAIN
High-Z
High-Z
High-Z
I/O8-I/O15
High-Z
High-Z
DATAOUT
DATAOUT
DATAIN
High-Z
DATAIN
High-Z
High-Z
Function
Deselected - Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
3624 tbl 03
6.342
Share Link: 