NTE2562 Просмотр технического описания (PDF) - NTE Electronics

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NTE2562

Silicon Complementary Transistors High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector–Emitter Saturation Voltage

NTE2562

VCE(sat) IC = 5A, IB = 0.25A

–

– 0.4 V

NTE2563

–

– 0.5 V

Collector–Base Breakdown Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Breakdown Voltage

V(BR)CBO IC = 1mA, IE = 0

V(BR)CEO IC = 1mA, RBE = ∞

V(BR)EBO IE = 1mA, IC = 0

60 –

–

V

30 –

–

V

6

–

–

V

Turn–On Time

NTE2562

NTE2563

Storage Time

NTE2562

NTE2563

ton

VCC = 10V, VBE = –5V,

10IB1 = –10IB2 = IC = 5A,

Pulse Width = 20µs,

Duty Cycle = 1%

tstg

– 0.2 – µs

– 0.1 – µs

– 0.5 – µs

– 0.3 – µs

Fall Time

tf

– 0.03 – µs

.402 (10.2) Max

.224 (5.7) Max

.295

(7.5)

.669

(17.0)

Max

BCE

.122 (3.1)

Dia

.165

(4.2)

.531

(13.5)

Min

.173 (4.4) Max

.114 (2.9) Max

.100 (2.54)

.059 (1.5) Max

NOTE: Tab is isolated

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