NTE2387 Просмотр технического описания (PDF) - NTE Electronics

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NTE2387

MOSFET N–Channel Enhancement Mode, High Speed Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Dynamic Characteristics (Cont’d)

Internal Drain Inductance

LD

Measured from contact screw on tab –

3.5

–

nH

to center of die

Measured from drain lead 6mm from – 4.5 – nH

package to center of die

Internal Source Inductance

LS Measured from the source lead

6mm from package to source

bonding pad

– 7.5 – nH

Source–Drain Diode Ratings and Characteristics

Continuous Reverse Drain Current

IDR

–

–

4

A

Pulsed Reverse Drain Current

IDRM

–

–

16 A

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovered Charge

VSD IF = 4A, VGS = 0

– 1.0 1.3 V

trr

IF = 4A, diF/dt = 100A/µs, VGS = 0, – 1800 –

ns

Qrr

VR = 100V

–

12

– µC

.420 (10.67)

Max

.110 (2.79)

.147 (3.75) Dia Max

.500

(12.7)

Max

.070 (1.78) Max

Gate

.100 (2.54)

.250 (6.35)

Max

.500

(12.7)

Min

Source

Drain/Tab

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