NTE2384 Просмотр технического описания (PDF) - NTE Electronics

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NTE2384

MOSFET N–Channel Enhancement Mode, High Speed Switch

NTE Electronics 

NTE2384

MOSFET

N–Channel Enhancement Mode,

High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

Drain–Gate Voltage (RGS = 20kΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V

Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V

Pulsed Drain Current (TC = +25°C), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A

Continuous Drain Current, ID

TC = +30°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0A

TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A

Total Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W

Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W

Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Static Characteristics

Drain–Source Breakdown Voltage

Zero–Gate Voltage Drain Current

Gate–Body Leakage Current

Gate Threshold Voltage

Static Drain–Source On Resistance

Dynamic Characteristics

V(BR)DSS

IDSS

IGSS

VGS(th)

RDS(on)

ID = 250µA, VGS = 0

VGS = 0, VDS = 800V, TJ = +25°C

VGS = 0, VDS = 800V, TJ = +125°C

VDS = 0, VGS = ±20V

VDS = VGS, ID = 1mA

VGS = 10V, ID = 3A

Forward Transconductance

Input Capactiance

Output Capacitance

Reverse Transfer Capactiance

Turn–On Time

Rise Time

Turn–Off Delay Time

Fall Time

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS = 25V, ID = 3A

VDS = 25V, VGS = 0, f = 1MHz

VDD = 30V, ID = 2.6A, VGS = 10V,

RGS = 50Ω, Rgen = 50Ω

Min Typ Max Unit

800 –

–

V

–

20 250 µA

– 0.1 1.0 mA

–

10 100 nA

2.1 3.0 4.0 V

– 1.3 1.5 Ω

1.8 3.0 – mho

– 3900 5000 pf

– 200 350 pf

–

80 140 pf

–

60 90 ns

–

90 140 ns

– 330 430 ns

– 110 140 ns

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