SS26 Просмотр технического описания (PDF) - General Semiconductor

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SS26

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

General Semiconductor 

RATINGS AND CHARACTERISTIC CURVES SS22 THRU SS26

FIG. 1 - FORWARD CURRENT DERATING CURVE

2.0

RESISTIVE OR

INDUCTIVE LOAD

1.5

1.0

P.C.B. MOUNTED ON

0.5

0.2 X 0.2” (5.0 x 5.0mm)

COPPER PAD AREAS

SS22 - SS24

SS25 & SS26

0

50 60 70 80 90 100 110 120 130 140 150 160

LEAD TEMPERATURE,°C

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

50

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

AT RATED TL

40

30

20

10

0

1

10

100

NUMBER OF CYCLES AT 60HZ

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

50

10.0

TJ=125°C

1

PULSE WIDTH=300µs

1% DUTY CYCLE

TJ=25°C

TJ=150°C

0.1

0.01

0

SS22 - SS24

SS25 & SS26

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

INSTANTANEOUS FORWARD VOLTAGE

VOLTS

FIG. 4 - TYPICAL REVERSE CURRENT

CHARACTERISTICS

100

SS22 - SS24

SS25 & SS26

10

TA=125°C

1

TA=75°C

0.1

0.01

TA=75°C

0.001

0

20

40

60

80 100

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

500

TJ=25°C

f=1.0 MHz

Vsig=50mVp-p

100

SS22 - SS24

SS25 & SS26

10

0.1

1

10

100

REVERSE VOLTAGE, VOLTS

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