SSF1020A Просмотр технического описания (PDF) - Silikron Semiconductor Co.,LTD.
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SSF1020A Datasheet PDF : 5 Pages
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SSF1020A
Feathers:
ID =60A
Advanced trench process technology
BV=100V
Ultra low Rdson, typical 16mohm
Rdson=20mΩ（max.）
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Description:
The SSF1020A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
SSF1020A TOP View (D2PAK)
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1020A is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC Continuous drain current,VGS@10V
ID@Tc=100ْC Continuous drain current,VGS@10V
IDM
Pulsed drain current ①
PD@TC=25ْC Power dissipation
Linear derating factor
VGS
EAS
EAR
TJ
TSTG
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJC Junction-to-case
RθJA Junction-to-ambient
Min.
—
—
Max.
60
50
240
120
2.0
±20
240
TBD
–55 to +175
Typ.
Max.
1.25
—
—
62
Units
A
W
W/ ْC
V
mJ
ْC
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ.
BVDSS
RDS(on)
VGS(th)
gfs
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
100 —
— 16
2.0 3.0
- 58
——
IDSS
Drain-to-Source leakage current
——
Max. Units
—V
20 mΩ
4.0 V
—S
1
μA
10
IGSS
Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD
2009.12.13
— — 100 nA
Version : 1.1
Test Conditions
VGS=0V,ID=250μA
VGS=10V,ID=30A
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=100V,VGS=0V
VDS=100V,
VGS=0V,TJ=150ْC
VGS=20V
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