BDV64 Просмотр технического описания (PDF) - Comset Semiconductors
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BDV64 Datasheet PDF : 4 Pages
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BDV64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICEO
IEBO
ICBO
VCEO
hFE
VCE(SAT)
VBE
Collector Cutoff
Current
Emitter Cutoff Current
Collector Cutoff
Current
Collector-Emitter
Breakdown Voltage (*)
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter
Voltage(*)
VCE= -30 V, IB= 0
VCE= -40 V, IB= 0
VCE= -50 V, IB= 0
VCE= -60 V, IB= 0
VBE= -5 V, IC= 0
IE= 0
Tj=25°C
IE= 0
Tj=150°C
VCB= -60 V
VCB= -80 V
VCB= -100 V
VCB= -120 V
VCB= -30 V
VCB= -40 V
VCB= -50 V
VCB= -60 V
IC= -30 mA, IB = 0
VCE= -4 V, IC= -5 A
IC= -5 A, IB= -20 mA
VCE= -4 V, IC= -5 A
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
BDV64
BDV64A
BDV64B
BDV64C
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
Min Typ Max Unit
-
-
-2 mA
-
-
-5 mA
-
- -0.4
mA
-
-
-2
-60 -
-80 -
-100 -
-120 -
-
-
V
-
1000 -
-
-
-
-
-2
V
-
- -2,5 V
26/09/2012
COMSET SEMICONDUCTORS
3/4
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