GP401DDM18 Просмотр технического описания (PDF) - Dynex Semiconductor

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GP401DDM18

Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module

Dynex Semiconductor 

GP401DDM18

ELECTRICAL CHARACTERISTICS

Tcase = 25˚C unless stated otherwise.

Symbol

Parameter

I

Collector cut-off current

CES

IGES

V

GE(TH)

VCE(sat)

Gate leakage current

Gate threshold voltage

Collector-emitter saturation voltage

IF

Diode forward current

I

Diode maximum forward current

FM

VF

Diode forward voltage

Cies

Input capacitance

L

Module inductance

M

Test Conditions

VGE = 0V, VCE = VCES

VGE = 0V, VCE = VCES, Tcase = 125˚C

VGE = ±20V, VCE = 0V

IC = 20mA, VGE = VCE

VGE = 15V, IC = 400A

V = 15V, I = 400A, , T = 125˚C

GE

C

case

DC

tp = 1ms

IF = 400A

I = 400A, T = 125˚C

F

case

VCE = 25V, VGE = 0V, f = 1MHz

-

Min. Typ. Max. Units

-

-

1

mA

-

-

12 mA

-

-

2

µA

4.5

5.5

6.5

V

-

2.6

3.2

V

-

3.3

4

V

-

-

400 A

-

-

800 A

-

2.2

2.5

V

-

2.3

2.6

V

-

45

-

nF

-

20

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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