2SK1194 Просмотр технического описания (PDF) - Shindengen

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2SK1194

VR Series Power MOSFET

Shindengen 

VR Series Power MOSFET

2SK1194 ( F05E23 )

●Electrical Characteristics Tc = 25℃

Item

Symbole

Conditions

Drain-Source Breakdown Voltage

V(BR)DSS ID = 250μA, VGS = 0V

Zero Gate Voltage Drain Current

IDSS VDS = 230V, VGS = 0V

Gate-Source Leakage Current

IGSS VGS = ±20V, VDS = 0V

Forward Tranｓconductance

gfs ID = 0.5A, VDS = 10V

Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 0.5A, VGS = 10V

Gate Threshold Voltage

VTH ID = 0.2mA, VDS = 10V

Source-Drain Diode Forward Voltage

VSD IS = 0.5A, VGS = 0V

Thermal Resistance

θjc junction to case

Total Gate Charge

Qg VGS = 10V, ID = 0.5A, VDD = 200V

Input Capacitance

Ciss

Reverse Transfer Capacitance

Crss VDS = 10V, VGS = 0V, f = 1MHZ

Output Capacitance

Coss

Turn-On Time

ton ID = 0.5A, VGS = 10V, RL = 200Ω

Turn-Off Time

toff

Min. Typ. Max. Unit

230

V

250 μA

±0.1

0.2 0.4

S

5.5 8 Ω

234 V

1.5

20.8 ℃/Ｗ

2.7

nC

45

4.5

pF

30

30 60 ns

50 100

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