CPV364M4KPBF Просмотр технического описания (PDF) - International Rectifier

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CPV364M4KPBF

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

International Rectifier 

CPV364M4KPbF

+Vge

90% Vge

80%

of Vce

Same type

device as

D.U.T.

430µF

D.U.T.

Ic 10% Vce

td(off)

Vce

90% Ic

Ic

5% Ic

tf

t1+5µS

∫ Eoff = Vce ic dt

t1

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

10% +Vg

GATE VOLTAGE D.U.T.

+Vg

Vce

10% Ic

Vcc

90% Ic

td(on)

5% Vce

tr

t1

DUT VOLTAGE

AND CURRENT

Ipk

Ic

∫ t2

Eon = Vce ie dt

t1

t2

trr

Ic

tx

10% Vcc

Vpk

Irr

DIODE REVERSE

RECOVERY ENERGY

t3

trr

∫ Qrr = id dt

tx

10% Irr

Vcc

DIODE RECOVERY

WAVEFORMS

t4

∫ Erec = Vd id dt

t3

t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

8

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

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