C67078-S1344-A2 Просмотр технического описания (PDF) - Infineon Technologies

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C67078-S1344-A2

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 51

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Static Characteristics

Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

1000 -

Gate threshold voltage

VGS(th)

VGS=VDS, ID = 1 mA

2.1

3

Zero gate voltage drain current

IDSS

VDS = 1000 V, VGS = 0 V, Tj = 25 °C

-

0.1

VDS = 1000 V, VGS = 0 V, Tj = 125 °C

-

10

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V

-

10

Drain-Source on-resistance

RDS(on)

VGS = 10 V, ID = 2.2 A

-

3.6

-

4

1

100

100

4

Unit

V

µA

nA

Ω

Semiconductor Group

2

07/96

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